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VMO 1600-02P
PolarHT TM Module
N-Channel Enhancement Mode
D
V DSS = 200 V
I D80 = 1600 A
R DS(on) = 1.7 m W max.
S
D
MOSFET
G
KS
S
Features
KS
G
Symbol
V DSS
V GS
Conditions
T VJ = 25°C to 150°C
Maximum Ratings
200 V
± 20 V
? PolarHT TM technology
- low R DSon
- dv/dt ruggedness
- fast intrinsic reverse diode
? Package
I D25
I D80
I F25
I F80
T C = 25°C
T C = 80°C
T C = 25°C (diode)
T C = 80°C (diode)
1900
1600
1900
1600
A
A
A
A
- low inductive current path
- screw connection to high current main
terminals
- use of non interchangeable connectors
for auxiliary terminals possible
- Kelvin source terminals for easy drive
Symbol
R DSon
V GS(th)
Conditions
V GS = 10 V; I D = 1600 A;
V DS = 20 V; I D = 5 mA
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
T VJ = 25°C 1.58 1.7 m W
T VJ = 125°C 3.25 3.6 m W
2.5 5 V
- isolated ceramic base plate
Applications
? converters with high power density for
- main & aux. AC drives of electric vehicles
- DC drives
- power supplies
I DSS
V DS = V DSS ; V GS = 0 V;
T VJ = 25°C
T VJ = 125°C
5.0
0.5
mA
mA
I GSS
Q g
Q gs
Q gd
V GS = ± 20 V; V DS = 0 V
V GS = 10 V; V DS = 0.5 · V DSS ; I D = I D80
2900
600
1600
2
μA
nC
nC
nC
t d(on)
t r
t d(off)
t f
E on
E off
E rec
t d(on)
t r
t d(off)
t f
E on
E off
E rec
inductive load
V GS = 10 V; V DS = 100 V
I D = 1600 A; R G = 1.8 ?
inductive load
V GS = 10 V; V DS = 100 V
I D = 1600 A; R G = 1.8 ?
T VJ = 25°C
T VJ = 125°C
320
1220
620
700
24
152
3.7
340
1220
740
580
28
147
4.9
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
R thJC
R thJH
with heat transfer paste
0.037
0.03
0.056
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100302b
1-6
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